3-D Diffusion Models for Chemically-Amplified Resists Using Massively Parallel Processors
نویسنده
چکیده
Three-dimensional concentration dependent diffusions and simultaneous chemical reactions in chemically-amplified photoresists are simulated. Fickian, a linearly increasing diffusivity and an exponentially increasing diffusivity due to free volume increase with T-BOC are considered. Two different grid to processor mappings are proposed in implementing the simulator on massively parallel processors using the Scharfetter and Gummel discretization method. Experimental and simulation results which support an exponential diffusion coefficient are illustrated.
منابع مشابه
Acid-Quencher Reaction-Diffusion during the Post-Exposure Bake of Chemically Amplified Resists Part 1: Initially linear concentration profiles
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تاریخ انتشار 2007